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| 15 -4.5V -3.0V -8V 10 -2.5V 6 5 4 -2.0V Vds=-5V 25C 125C 3 2 Vgs=-1.5V 1 -Id (A) 5 0 0 2 3 4 -Vds (Volts) Fig 1: On-Region Characteristics 1 5 -Id (A) 0 0 0.5 1 1.5 2 -Vgs(Volts) Figure 2: Transfer Characteristics 2.5 225 200 1.6 Vgs=-1.8V Normalized On-Resistance Id=-1A 1.4 Vgs=-1.8V Vgs=-2.5V Rds(on) (m:) 175 150 125 100 75 0 2 4 6 -Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 225 200 Id=-1A Vgs=-2.5V Vgs=-4.5V 1.2 Vgs=-4.5V 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1E+01 1E+00 1E-01 125 Rds(on) (m:) 175 -Is (A) 25C 1E-02 1E-03 150 125 25C 100 75 1 2 3 4 5 6 125C 1E-04 1E-05 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage -Vsd (Volts) Figure 6: Body-Diode Characteristics 5 4 Vds=-10V Id=-1.0A 800 3 Capacitance (pF) 600 Ciss -Vgs (Volts) 400 2 1 0 0 2 4 6 8 -Qg (nC) Figure 7: Gate-Charge Characteristics 200 Crss Coss 0 0 5 10 15 20 -Vds (Volts) Figure 8: Capacitance Characteristics 100.0 Tj(max)=150C Ta=25C 100Ps 12 10 Tj(max)=150C Ta=25C -Id (Amps) 10Ps Rds(on) limited 1.0 1s 10s 0.1 0.1 1 -Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC 0.1s 1ms 10ms Power (W) 10.0 8 6 4 2 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZTja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.ZTja.RTja RTja=360C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 Single Pulse 0.01 0.00001 Pd Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance |
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